2009. 12. 21 1/3 semiconductor technical data PG05TADF10 tvs diode array for esd protection in portable electronics revision no : 0 protection in portable electronics applications. features 30 watts peak pulse power (tp=8/20 )s transient protection for data lines to iec 61000-4-2(esd) 20kv (air/contact) small package for use in portable electronics. suitable replacement for multi-layer varistors in esd protection applications. protects one i/o or power line. low clamping voltage. low leakage current. applications usb 2.0, 10/100/1000 ethernet, firewire, dvi, hdmi, s-ata mobile communication consumer products (stb, mp3, dvd, dsc...) lcd-display, camera notebooks and desktop computers, peripherals maximum rating (ta=25) dim a b d e g h k dfn10 c j f millimeters c 9 8 7 6 1 2 3 4 5 d h e f g j k b a 1. input / output 1 2. input / output 2 3. gnd 4. input / output 3 5. input / output 4 2.0 0.5 0.05 max 2.3 0.035 + _ 0.2 0.025 + _ 0.4 0.025 + _ 0.35 0.025 + _ 0.94 0.025 + _ 0.31 0.01, -0.02 + _ 1 0.035 + _ electrical characteristics (ta=25 ) characteristic symbol rating unit peak pulse current (tp=8/20 s) i pp 3 a operating temperature range t op -40~125 storage temperature t stg -55 150 characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5.3 v reverse breakdown voltage v br i t =1ma (i/o to gnd) 6 - - v reverse leakage current i r v rwm =5.3v (i/o to gnd) - - 50 a clamping voltage v c i pp =1a, tp=8/20 ? , (i/o to gnd) - 10 13 v i pp =3a, tp=8/20 ? , (i/o to gnd) - 12 15 junction capacitance c j v r =0v, f=1mhz (i/o to gnd) - 0.4 0.6 pf marking z1 0825 type name lot no. 9 876 1 245
2009. 12. 21 2/3 PG05TADF10 revision no : 0 01234 6 9 8 7 13 12 11 10 forward clamping voltage v fc (v) 0 6 2 1 0 forward clamping voltage 345 1 2 3 4 5 reverse current i r (a) 10 -11 10 -6 10 -10 75 50 25 ambient temperature ta ( ? ) reverse current 100 125 150 10 -9 10 -8 10 -7 clamping voltage peak pulse current i pp ( ) peak pulse current i pp ( ) clamping voltage v c (v) t p =8/20 us gnd to i/o t p =8/20 us i/o to gnd line capacitance line capacitance ambient temperature ta ( ? ) frequency f ( ? ) capacitance c j (pf) capacitance c j (pf) capacitance c j (pf) capacitance reverse voltage v r (v) 0 0.6 2 1 0 345 0.1 0.2 0.3 0.4 0.5 f=1 mh z i/o to gnd 0 0.6 1000 500 0 15000 2000 2500 3000 0.1 0.2 0.3 0.4 0.5 i/o to gnd i/o to gnd 0 0.6 0.7 0 -25 -50 25 50 75 100 0.1 0.2 0.3 0.4 0.5 v r =0v f=1mh z v r =5.3v vr=0v 5.3v 0v vr=5.3v
2009. 12. 21 3/3 PG05TADF10 revision no : 0 dim a b d e g h k dfn10 c j f millimeters c 9 8 7 6 1 2 3 4 5 d h e f g j k b a 1. input / output 1 2. input / output 2 3. gnd 4. input / output 3 5. input / output 4 2.0 0.5 0.05 max 2.3 0.035 + _ 0.2 0.025 + _ 0.4 0.025 + _ 0.35 0.025 + _ 0.94 0.025 + _ 0.31 0.01, -0.02 + _ 1 0.035 + _
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